JPH058585B2 - - Google Patents

Info

Publication number
JPH058585B2
JPH058585B2 JP58174984A JP17498483A JPH058585B2 JP H058585 B2 JPH058585 B2 JP H058585B2 JP 58174984 A JP58174984 A JP 58174984A JP 17498483 A JP17498483 A JP 17498483A JP H058585 B2 JPH058585 B2 JP H058585B2
Authority
JP
Japan
Prior art keywords
gate
layer metal
basic cell
wiring
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58174984A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6065547A (ja
Inventor
Munehiro Uratani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP58174984A priority Critical patent/JPS6065547A/ja
Priority to GB08422601A priority patent/GB2146842B/en
Priority to DE19843433211 priority patent/DE3433211A1/de
Publication of JPS6065547A publication Critical patent/JPS6065547A/ja
Priority to US06/859,208 priority patent/US4783692A/en
Publication of JPH058585B2 publication Critical patent/JPH058585B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP58174984A 1983-09-20 1983-09-20 半導体装置 Granted JPS6065547A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP58174984A JPS6065547A (ja) 1983-09-20 1983-09-20 半導体装置
GB08422601A GB2146842B (en) 1983-09-20 1984-09-07 Cmos gate array
DE19843433211 DE3433211A1 (de) 1983-09-20 1984-09-10 Cmos-gatter
US06/859,208 US4783692A (en) 1983-09-20 1986-04-28 CMOS gate array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58174984A JPS6065547A (ja) 1983-09-20 1983-09-20 半導体装置

Publications (2)

Publication Number Publication Date
JPS6065547A JPS6065547A (ja) 1985-04-15
JPH058585B2 true JPH058585B2 (en]) 1993-02-02

Family

ID=15988183

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58174984A Granted JPS6065547A (ja) 1983-09-20 1983-09-20 半導体装置

Country Status (4)

Country Link
US (1) US4783692A (en])
JP (1) JPS6065547A (en])
DE (1) DE3433211A1 (en])
GB (1) GB2146842B (en])

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0642537B2 (ja) * 1985-11-15 1994-06-01 株式会社東芝 半導体装置
JP2516962B2 (ja) * 1987-03-18 1996-07-24 三菱電機株式会社 マスタ−スライスｌｓｉ
US5172210A (en) * 1987-03-18 1992-12-15 Mitsubishi Denki Kabushiki Kaisha Master slice integrated circuit having a memory region
JPS63311740A (ja) * 1987-06-15 1988-12-20 Matsushita Electronics Corp 半導体集積回路装置
US5185283A (en) * 1987-10-22 1993-02-09 Matsushita Electronics Corporation Method of making master slice type integrated circuit device
JPH01256149A (ja) * 1988-04-06 1989-10-12 Hitachi Ltd ゲートアレイ集積回路
DE68929068T2 (de) * 1988-04-22 1999-12-23 Fujitsu Ltd., Kawasaki Integrierte Halbleiterschaltungsanordnung vom "Masterslice"-Typ
JP2666807B2 (ja) * 1988-06-16 1997-10-22 富士通株式会社 集積回路パターンの形成方法
CA1309781C (en) * 1988-06-21 1992-11-03 Colin Harris Compact cmos analog crosspoint switch matrix
JPH02166766A (ja) * 1988-12-21 1990-06-27 Oki Electric Ind Co Ltd 半導体集積回路
US4928160A (en) * 1989-01-17 1990-05-22 Ncr Corporation Gate isolated base cell structure with off-grid gate polysilicon pattern
JPH0383375A (ja) * 1989-08-25 1991-04-09 Sony Corp 半導体装置
US5459340A (en) * 1989-10-03 1995-10-17 Trw Inc. Adaptive configurable gate array
US5217915A (en) * 1991-04-08 1993-06-08 Texas Instruments Incorporated Method of making gate array base cell
US6020616A (en) * 1998-03-31 2000-02-01 Vlsi Technology, Inc. Automated design of on-chip capacitive structures for suppressing inductive noise
US6010939A (en) 1998-03-31 2000-01-04 Vlsi Technology, Inc. Methods for making shallow trench capacitive structures
DE10128580B4 (de) * 2001-06-13 2006-04-13 Infineon Technologies Ag Schaltungsanordnung mit einer Mehrzahl von Transistoren zweier unterschiedlicher Leitfähigkeitstypen
US7219324B1 (en) * 2003-06-02 2007-05-15 Virage Logic Corporation Various methods and apparatuses to route multiple power rails to a cell
US7244975B2 (en) * 2005-07-05 2007-07-17 United Microelectronics Corp. High-voltage device structure
US7728362B2 (en) 2006-01-20 2010-06-01 International Business Machines Corporation Creating integrated circuit capacitance from gate array structures
US8286114B2 (en) * 2007-04-18 2012-10-09 Taiwan Semiconductor Manufacturing Company, Ltd. 3-dimensional device design layout
US8237201B2 (en) 2007-05-30 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Layout methods of integrated circuits having unit MOS devices

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3652906A (en) * 1970-03-24 1972-03-28 Alton O Christensen Mosfet decoder topology
US3715603A (en) * 1971-10-28 1973-02-06 Rca Corp Threshold gate circuits employing field-effect transistors
US3855549A (en) * 1973-08-24 1974-12-17 Rca Corp Circuit, such as cmos crystal oscillator, with reduced power consumption
JPS5318377A (en) * 1976-08-03 1978-02-20 Toshiba Corp Logical operation circuit
JPS5925381B2 (ja) * 1977-12-30 1984-06-16 富士通株式会社 半導体集積回路装置
US4178605A (en) * 1978-01-30 1979-12-11 Rca Corp. Complementary MOS inverter structure
US4724530A (en) * 1978-10-03 1988-02-09 Rca Corporation Five transistor CMOS memory cell including diodes
JPS5587471A (en) * 1978-12-26 1980-07-02 Fujitsu Ltd Mos dynamic circuit
JPS5843905B2 (ja) * 1979-07-31 1983-09-29 富士通株式会社 半導体集積回路の製造方法
JPS5749253A (en) * 1980-09-09 1982-03-23 Toshiba Corp Semiconductor integrated circuit
JPS5890758A (ja) * 1981-11-25 1983-05-30 Mitsubishi Electric Corp 相補形集積回路装置

Also Published As

Publication number Publication date
GB2146842A (en) 1985-04-24
DE3433211A1 (de) 1985-04-11
GB8422601D0 (en) 1984-10-10
JPS6065547A (ja) 1985-04-15
US4783692A (en) 1988-11-08
GB2146842B (en) 1987-05-28

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